InGaAsN/AlGaAs P-n-p heterojunction bipolar transistor

GaAs Heterojunction Bipolar Transistor Emitter Design

We demonstrate that GaAs-based HBTs with very low base currents at both low and high injection levels can be achieved using either Al0.35Ga0.65As or InGaP in the emitter with the proper optimization of structure and growth. We observe an order of magnitude reduction in space charge recombination current as the Al composition, and hence the energy-gap, of the emitter increases from 25% (1.77 eV)...

Topologically matching supramolecular n/p-heterojunction architectures.

Matching matters when building supramolecular n/p-heterojunction photosystems on solid supports that excel with efficient photocurrent generation, important critical thickness, smooth surfaces, and flawless responsiveness to functional probes for the existence of operational intraand interlayer recognition motifs. BHOSALE, Rajesh Shivajirao, et al. Topologically Matching Supramolecular n/p-Hete...

Transparent p-n Heterojunction Thin Film Diodes

Transparent p-n heterojunction diodes are fabricated using p-type CuYO2:Ca and n-type ZnO:Al thin films on a glass substrate coated with indium-tin oxide (ITO). The contact between the n-ZnO:Al / p-CuYO2:Ca heterojunction is found to be rectifying, while the ITO / ZnO:Al contact is ohmic. The typical ratio of forward to reverse current is 15 in the range -3 to 3V. The diode current-voltage char...

Dead space effect in space-charge region of collector of AlGaAsÕInGaAs p-n-p heterojunction bipolar transistors

An enhanced model for InGaP/GaAs heterojunction bipolar transistor

This paper presents an improved InGaP/GaAs heterojunction bipolar transistor (HBT) model based on the Vertical Bipolar Inter-Company (VBIC) model. New transport current expression is proposed by considering the heterojunction effect. Collector capacitance is developed due to the mobile charge modulation, and the transit time formula is improved to account for electron velocity variation with th...